How to test the penetration current IEO of the smd transistor

     The ICEO of the patch transistor is βIcbo. As the ambient temperature increases, ICBO increases, which will inevitably lead to an increase in ICEO. The increase of IEO will directly affect the stability of the pipe work, so in use, small IEO pipes should be used as much as possible.

     By directly measuring the resistance between the e-c poles of the transistor with a multimeter, the size of the IEO can be estimated indirectly. The specific method is as follows: The range of the multimeter resistance is generally R×100 or R×1K. For PNP tubes, black meter tubes Connect the e pole, the red test lead to the c pole, for the NPN transistor, the black test lead to the c pole, and the red test lead to the e pole.

     The larger the measured resistance, the better. The larger the resistance between e and c, the smaller the ICEO of the tube; on the contrary, the smaller the measured resistance, the larger the ICEO of the tube under test.

     Generally speaking, the resistance value of medium and low power silicon tube and germanium material low frequency tube should be hundreds of kiloohms and dozens of kiloohms respectively. If the resistance is very small or the pointer of the multimeter shakes back and forth during the test, it indicates that the ICEO is very Large, the performance of the tube is unstable.