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1200V SiC cascode power MOSFET performs far superior than others switches, claims AoS

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Alpha and Omega Semiconductor Co., Ltd. (AOS) and SemiSouth Laboratories jointly demonstrated UniSiC, which is a 1200V, 90mΩ MOSFET in a TO262 package.

UniSiC MOSFETs are praised for their low Rdson and gate charge Qg, excellent body diodes with almost no stored charge and low diode forward voltage drop. The device can replace traditional MOSFETs or IGBTs with standard gate drivers, but can switch over a wide range of speeds-as fast as super-junction MOSFETs or as slow as IGBTs. Compared with existing IGBTs, silicon power MOSFETs or even the most competitive SiC 1200V MOSFETs, the performance of this device is much superior.

The following table summarizes the key data and shows the die size of the 1200V IGBT with co-packaged diode, the competitor's 1200V SiC MOSFET and the AOS UniSiC stacked-gate cascode device. The device is small in size and high in power density.

UniSiC devices are formed by stacking specially designed low-voltage silicon MOSFETs on normally-on SiC JFETs provided by SemiSouth.

Vice President Dr. Anup Bhalla said: "Using the excellent characteristics of SiC JFETs in high-voltage applications and solving the switching problems that plagued cascode devices in the past, AOS can provide ideal switches for the power electronics industry." AOS High Voltage Discrete Technology President . "These devices can be used like conventional discrete IGBTs and FETs using the same gate driver, allowing users to achieve huge efficiency improvements without excessive redesign."

Dr. Mike Chang, President and CEO of AOS said: "We are very pleased to introduce this new high-voltage technology, which, in cooperation with SemiSouth Laboratories, enables AOS to bring truly revolutionary equipment into the power conversion field." "Products like this will make AOS the preferred high-voltage supplier, which will help us achieve the dual goals of product diversification and rapid growth."

"SemiSouth is very pleased to see the performance achieved by AOS using our SiC power JFET chip. We released it for the first time in 2008, and we have seen our JFET products gain rapid market adoption, and AOS’s first stack cascade demonstration is indeed Taking performance and ease of use to the next level. We are very happy to establish this relationship with AOS as a valuable customer." said Dr. Jeff Casady, President and CTO of SemiSouth Laboratories.