Infineon Releases CoolSiC ? MOSFET 1700 V SMD - Embedded Computing Design

June 1, 2020

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Infineon Technologies announced that it provides 1700 voltage levels through its trench semiconductor technology, thereby increasing its CoolSiC™ MOSFET product portfolio.

Infineon Technologies announced that it provides 1700 voltage levels through its trench semiconductor technology, thereby increasing its CoolSiC™ MOSFET product portfolio. The company had previously added 650V to its product portfolio earlier this year.

The 1700V surface mount device (SMD) has the physical characteristics of silicon carbide (SiC), which provides low switching and conduction losses. According to the company, it targets auxiliary power sources in three-phase conversion systems, such as motor drives, renewable energy, charging infrastructure and HVDC systems.

In the case of low-power applications operating below 100W, many designers prefer a single-ended flyback topology. The topology of the CoolSiC MOSFET 1700 V in the SMD package can be used for auxiliary circuits connected to the DC link, and the maximum input voltage is 1000V.

In addition, its blocking voltage eliminates concerns about overvoltage margin and power supply reliability. It has low device capacitance and voltage-level transistor gate charge.

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